60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101
Prezzo unitario
€ 5,14290
€ 6,27434
60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101 è disponibile per l'acquisto in incrementi di 500
GaNFETs and ICs DemoBoards EPC EPC2101
60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101
Produttore
EPC
Art.
498842269
Part. N.
EPC2101
GaNFETs and ICs DemoBoards EPC EPC2101
Panoramica del prodotto
GaNFETs and ICs DemoBoards EPC EPC2101 60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge
Documenti tecnici
Scheda tecnica 60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101
Scheda tecnica
Articolo
498842269
Marca
EPC
Manufacturer Part Number
EPC2101
Modello
EPC2101
Product Name
60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101
Short Description
GaNFETs and ICs DemoBoards EPC EPC2101
SKU
498842269
Datasheet
epc_epc2101_498842269
Tempo medio consegna (giorni calendario)
112
Paese di provenienza
TW TWN TAIWAN
Codice TARIC
85412900
Unità di Misura di vendita
Pezzo
More from EPC
-
Half-Bridge Development Board, 200V/8A EPC90124Prezzo unitario € 203,12380 € 247,81104 -
Half-Bridge Development Board, 40V/25A EPC90132Prezzo unitario € 203,12380 € 247,81104 -
Half-Bridge Development Board, 100V/25A EPC90123Prezzo unitario € 203,12380 € 247,81104 -
Half-Bridge Development Board, 80V/25A EPC90137Prezzo unitario € 203,12380 € 247,81104 -
Half-Bridge Development Board, 100V/40A EPC90133Prezzo unitario € 203,12380 € 247,81104 -
Half-Bridge Development Board, 100V/45A EPC90135Prezzo unitario € 203,12380 € 247,81104 -
Half-Bridge Development Board, 80V/40A EPC90122Prezzo unitario € 203,12380 € 247,81104