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60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101

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Technical documents
Ficha técnica
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Regular Price € 5,14290
60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101 is available to buy in increments of 500
GaNFETs and ICs DemoBoards EPC EPC2101
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60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101

Fabricante EPC
Art. 498842269
Nº referencia fabricante EPC2101

GaNFETs and ICs DemoBoards EPC EPC2101

Resumen del producto

GaNFETs and ICs DemoBoards EPC EPC2101 60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge

Documentos técnicos

Ficha técnica 60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101
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Ficha técnica

SKU 498842269
Brand EPC
Manufacturer Part Number EPC2101
Model EPC2101
Product Name 60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101
Short Description GaNFETs and ICs DemoBoards EPC EPC2101
SKU 498842269
Technical datasheet epc_epc2101_498842269
AVG leadtime (calendar days) 112
Country of origin TW TWN TAIWAN
Eu Tariff Code (TARIC) 85412900
Selling UoM Pezzo

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Ficha técnica 60 V, 80 A (Q1), 350 A (Q2) Enhancement Mode GaN Power Transistor Half Bridge EPC2101
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