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100 V, 3.8 A (Q1 & Q2), 0.5 A (Q3) Enhancement Mode GaN Power Transistor Half Bridge with Integrated Synchronous Bootstrap EPC2107

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Regular Price € 0,86350
100 V, 3.8 A (Q1 & Q2), 0.5 A (Q3) Enhancement Mode GaN Power Transistor Half Bridge with Integrated Synchronous Bootstrap EPC2107 is available to buy in increments of 500
GaNFETs and ICs DemoBoards EPC EPC2107
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100 V, 3.8 A (Q1 & Q2), 0.5 A (Q3) Enhancement Mode GaN Power Transistor Half Bridge with Integrated Synchronous Bootstrap EPC2107

Fabricante EPC
Art. 498842275
Nº referencia fabricante EPC2107

GaNFETs and ICs DemoBoards EPC EPC2107

Resumen del producto

GaNFETs and ICs DemoBoards EPC EPC2107 100 V, 3.8 A (Q1 & Q2), 0.5 A (Q3) Enhancement Mode GaN Power Transistor Half Bridge with Integrated Synchronous Bootstrap

Documentos técnicos

Ficha técnica 100 V, 3.8 A (Q1 & Q2), 0.5 A (Q3) Enhancement Mode GaN Power Transistor Half Bridge with Integrated Synchronous Bootstrap EPC2107
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Ficha técnica

SKU 498842275
Brand EPC
Manufacturer Part Number EPC2107
Model EPC2107
Product Name 100 V, 3.8 A (Q1 & Q2), 0.5 A (Q3) Enhancement Mode GaN Power Transistor Half Bridge with Integrated Synchronous Bootstrap EPC2107
Short Description GaNFETs and ICs DemoBoards EPC EPC2107
SKU 498842275
Technical datasheet epc_epc2107_498842275
AVG leadtime (calendar days) 112
Country of origin TW TWN TAIWAN
Eu Tariff Code (TARIC) 85412900
Selling UoM Pezzo

Additional services

Ficha técnica 100 V, 3.8 A (Q1 & Q2), 0.5 A (Q3) Enhancement Mode GaN Power Transistor Half Bridge with Integrated Synchronous Bootstrap EPC2107
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